B. JAYASHREE. Deep level defects in electron irradiated GaN based Light emitting Diodes. INTERNATIONAL JOURNAL OF RESEARCH IN COMMERCE, IT, ENGINEERING AND SOCIAL SCIENCES ISSN: 2349-7793 Impact Factor: 6.876, [S. l.], v. 4, n. 1, p. 30–40, 2010. Disponível em: https://gejournal.net/index.php/IJRCIESS/article/view/1881. Acesso em: 23 jul. 2024.