B. JAYASHREE. “Deep Level Defects in Electron Irradiated GaN Based Light Emitting Diodes”. INTERNATIONAL JOURNAL OF RESEARCH IN COMMERCE, IT, ENGINEERING AND SOCIAL SCIENCES ISSN: 2349-7793 Impact Factor: 6.876 4, no. 1 (January 31, 2010): 30–40. Accessed July 23, 2024. https://gejournal.net/index.php/IJRCIESS/article/view/1881.